Inverter with balanced voltages across internal transistors

ABSTRACT

An inverter includes a first system voltage terminal, a second system voltage terminal, an output terminal, a plurality of P-type transistors, a plurality of N-type transistors, and a voltage drop impedance element. The first system voltage terminal receives a first voltage, and the second system voltage terminal receives a second voltage. The plurality of P-type transistors are coupled in series between the first system voltage terminal and the output terminal. The plurality of N-type transistors are coupled in series between the output terminal and the second system voltage terminal. The voltage drop impedance element is coupled in parallel with a first N-type transistor of the plurality of N-type transistors, and the impedance of the voltage drop impedance element is smaller than the impedance of the first N-type transistor when the first N-type transistor is turned off.

CROSS REFERENCE TO RELATED APPLICATION

This application claims priority of Taiwan application No. 106136053,which was filed on Oct. 20, 2017, and is included herein by reference.

TECHNICAL FIELD

This invention is related to an inverter, and more particularly, isrelated to an inverter with balanced voltages across internaltransistors.

BACKGROUND

The inverter is a logic gate to implement logic NOT in digital logiccircuits. That is, the inverter can output a high voltage signal whilereceiving a low voltage signal, and can output a low voltage signalwhile receiving a high voltage signal. Generally, the inverter can beimplemented by an N-type transistor and a P-type transistor coupled inseries. However, due to the characteristic of high input impedance andlow output impedance, the inverters are also used as signal buffers ordelay elements for output signals, and can be applied to many kinds ofcircuits.

In prior art, when the inverter is operated with high voltages, theinverter may include more series-connected transistors to increase theoverall voltage handling ability. However, in practical operations,since the cross voltages applied on the transistors may be different,some of the transistors may have to endure high cross voltages for along time, which may cause damages to the transistors and lower thesystem stability.

SUMMARY

One embodiment of the present invention discloses an inverter. Theinverter includes a first system voltage terminal, a second systemvoltage terminal, an output terminal, a plurality of P-type transistors,a plurality of N-type transistors, and a first voltage drop impedanceelement.

The first system voltage terminal receives a first voltage, and thesecond system voltage terminal receives a second voltage. The pluralityof P-type transistors are coupled in series between the first systemvoltage terminal and the output terminal. The plurality of N-typetransistors are coupled in series between the output terminal and thesecond system voltage terminal. The first voltage drop impedance elementis coupled in parallel with a first N-type transistor of the pluralityof N-type transistors. The impedance of the first voltage drop impedanceelement is smaller than the impedance of the first N-type transistorwhen the first N-type transistor is turned off.

Another embodiment of the present invention discloses an inverter. Theinverter includes a first system voltage terminal, a second systemvoltage terminal, an output terminal, a plurality of P-type transistors,and a plurality of N-type transistors. The first system voltage terminalreceives a first voltage, and the second system voltage terminalreceives a second voltage. The plurality of P-type transistors arecoupled in series between the first system voltage terminal and theoutput terminal. The plurality of N-type transistors are coupled inseries between the output terminal and the second system voltageterminal. The channel width-to-length ratio of a first N-type transistorof the plurality of N-type transistors is greater than the channelwidth-to-length ratio of a second N-type transistor of the plurality ofN-type transistors.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows an inverter according to one embodiment of the presentinvention.

FIG. 2 shows an inverter according to another embodiment of the presentinvention.

FIG. 3 shows an inverter according to another embodiment of the presentinvention.

FIG. 4 shows an inverter according to another embodiment of the presentinvention.

FIG. 5 shows an inverter according to another embodiment of the presentinvention.

FIG. 6 shows an inverter according to another embodiment of the presentinvention.

FIG. 7 shows an inverter according to another embodiment of the presentinvention.

FIG. 8 shows an inverter according to another embodiment of the presentinvention.

FIG. 9 shows an inverter according to another embodiment of the presentinvention.

DETAILED DESCRIPTION

Below, exemplary embodiments will be described in detail with referenceto accompanying drawings so as to be easily realized by a person havingordinary knowledge in the art. The inventive concept may be embodied invarious forms without being limited to the exemplary embodiments setforth herein. Descriptions of well-known parts are omitted for clarity,and like reference numerals refer to like elements throughout.

FIG. 1 shows an inverter 100 according to one embodiment of the presentinvention. The inverter 100 includes a first system voltage terminal110, a second system voltage terminal 120, an output terminal OUT,P-type transistors P₁ and P₂, N-type transistors N₁ and N₂, and voltagedrop impedance elements 130 ₁ and 130 ₂.

The P-type transistors P₁ and P₂ can be coupled in series between thefirst system voltage terminal 110 and the output terminal OUT, and theN-type transistors N₁ and N₂ can be coupled in series between the outputterminal OUT and the second system voltage terminal 120. The firstsystem voltage terminal 110 can receive a first voltage V1, and thesecond system voltage terminal 120 can receive a second voltage V2. Insome embodiments, the first voltage V1 can be higher than the secondvoltage V2. For example, the first voltage V1 can be used to provide thehigh voltage of the inverter 100, and can be, for example, 2.5V, whilethe second voltage V2 can be used to provide the low voltage of theinverter 100, and can be, for example, −2.5V. In other embodiments, thefirst voltage V1 can be the high voltage of the system, and the secondvoltage V2 can be the ground voltage of the system.

The P-type transistor P₁ has a first terminal, a second terminal, and acontrol terminal. The second terminal of the P-type transistor P₁ iscoupled to the output terminal OUT. The P-type transistor P₂ has a firstterminal, a second terminal, and a control terminal. The first terminalof the P-type transistor P₂ is coupled to the first system voltageterminal 110, and the second terminal of the P-type transistor P₂ iscoupled to the first terminal of the P-type transistor P₁. The N-typetransistor N₁ has a first terminal, a second terminal, and a controlterminal. The first terminal of the N-type transistor N₁ is coupled tothe output terminal OUT. The N-type transistor N₂ has a first terminal,a second terminal, and a control terminal. The first terminal of theN-type transistor N₂ is coupled to the second terminal of the N-typetransistor N₁ and the second terminal of the N-type transistor N₂ iscoupled to the second system voltage terminal 120.

In some embodiments, the control terminals of the P-type transistors P₁and P₂ and the control terminals of the N-type transistors N₁ and N₂ canbe coupled together for receiving the same control signal SIG_(IN). Whenthe control signal SIG_(IN) is at a high voltage, e.g. the first voltageV1, the P-type transistors P₁ and P₂ will be turned off and the N-typetransistors N₁ and N₂ will be turned on, pulling down the output signalSIG_(OUT) outputted from the output terminal OUT to be close to thesecond voltage V2.

In contrary, when the control signal SIG_(IN) is at a low voltage, e.g.the second voltage V2, the P-type transistors P₁ and P₂ will be turnedon and the N-type transistors N₁ and N₂ will be turned off, pulling upthe output signal SIG_(OUT) outputted from the output terminal OUT to beclose to the first voltage V1. In this case, the N-type transistors N₁and N₂ are turned off, and the total cross voltage applied on the N-typetransistors N₁ and N₂ would be almost equal to the voltage differencebetween the first voltage V1 and the second voltage V2. That is, theN-type transistors N₁ and N₂ together would have to endure the voltagedifference between the first voltage V1 and the second voltage V2.

Since the N-type transistor N₁ is closer to the output terminal OUT andthe N-type transistor N₂ is closer to the second system voltage terminal120, the gate-to-source voltages of these two transistors are different.Therefore, when turned off, the impedance of the N-type transistors N₁and N₂ would be quite different, resulting in unequal drain-to-sourcevoltages of these two transistors. That is, the cross voltages appliedon the N-type transistors N₁ and N₂ are not balanced. For example, ifthe first voltage V1 is 2.5V and the second voltage V2 is −2.5V, thenthe N-type transistors N₁ and N₂ would have to endure a total of 5Vtogether. However, the cross voltage applied on the N-type transistor N₁may be more than 3V while the cross voltage applied on the N-typetransistor N₂ may be less than 2V. In the case with the drain-to-sourcevoltages being largely unbalanced, the turned-off N-type transistor N₁may break down, resulting in abnormal operations of the inverter 100 andcausing instability of the system.

However, in FIG. 1, the voltage drop impedance element 130 ₁ is coupledin parallel with the N-type transistor N₁, and the impedance of thevoltage drop impedance element 130 ₁ is smaller than the impedance ofthe N-type transistor N₁ when the N-type transistor N₁ is turned off.Also, the voltage drop impedance element 130 ₂ is coupled in parallelwith the N-type transistor N₂, and the impedance of the voltage dropimpedance element 130 ₂ is smaller than the impedance of the N-typetransistor N₂ when the N-type transistor N₂ is turned off. In otherwords, when the N-type transistors N₁ and N₂ are turned off, the voltagedrop impedance elements 130 ₁ and 130 ₂ can form a current path betweenthe output terminal OUT and the second system voltage terminal 120.Since the impedances of the voltage drop impedance elements 130 ₁ and130 ₂ are smaller than the impedances of the N-type transistors N₁ andN₂ when the N-type transistors N₁ and N₂ are turned off, the currentflowing through the voltage drop impedance elements 130 ₁ and 130 ₂ willbe greater than the leakage current flowing through the N-typetransistors N₁ and N₂ when the N-type transistors N₁ and N₂ are turnedoff. In this case, by selecting the voltage drop impedance elements 130₁ and 130 ₂ to have proper impedances, the cross voltages applied on theN-type transistors N₁ and N₂ can be balanced. Also, in some embodiments,the impedance of the voltage drop impedance elements 130 ₁ and 130 ₂should be greater than 0.

For example, if the effective impedance of the voltage drop impedanceelement 130 ₁ in parallel with the N-type transistor N₁ being turned offis substantially equal to the effective impedance of the voltage dropimpedance element 130 ₂ in parallel with the N-type transistor N₂ beingturned off, then the voltage between the output terminal OUT and thesecond system voltage terminal 120 will be endured by the voltage dropimpedance element 130 ₁ coupled in parallel with the N-type transistorN₁ and the voltage drop impedance element 130 ₂ coupled in parallel withthe N-type transistor N₂ equally. In other words, the N-type transistorN₁ and N₂ would have the same cross voltages. Consequently, the issue ofsystem instability caused by unbalanced cross voltages on the N-typetransistors N₁ and N₂ can be mitigated. In some embodiments, since theinverter 100 is operated with direct current (DC) power, the effectiveimpedance can be referred to as effective resistance.

In addition, if the impedance of the voltage drop impedance element 130₁ is much smaller than the impedance of the N-type transistor N₁ whenthe N-type transistor N₁ is turned off, for example, ten times smaller,then the current flowing through the voltage drop impedance element 130₁ would be ten times greater than the current flowing through the N-typetransistor N₁. Therefore, the cross voltage applied on the N-typetransistor N₁ would be dominated by the voltage drop impedance element130 ₁. Similarly, if the impedance of the voltage drop impedance element130 ₂ is much smaller than the impedance of the N-type transistor N₂when the N-type transistor N₂ is turned off, for example, ten timessmaller, then the current flowing through the voltage drop impedanceelement 130 ₂ would be ten times greater than the current flowingthrough the N-type transistor N₂. Therefore, the cross voltage appliedon the N-type transistor N₂ would be dominated by the voltage dropimpedance element 130 ₂. In this case, if the voltage drop impedanceelements 130 ₁ and 130 ₂ have similar impedances, that is, if theimpedances of the voltage drop impedance elements 130 ₁ and 130 ₂ aresubstantially the same, then the N-type transistors N₁ and N₂ will havesimilar cross voltages, mitigating the system instability caused by highcross voltages applied on only some of the transistors.

In FIG. 1, the voltage drop impedance element 130 ₁ can include X diodesD1 coupled in series, and the voltage drop impedance element 130 ₂ caninclude Y diodes D2 coupled in series. The diodes D1 are independentfrom the N-type transistor N₁, and the diodes D2 are independent fromthe N-type transistor N₂. Suppose the N-type transistors N₁ and N₂ havethe same electronic characteristics, X and Y can be the same integergreater than 1. Consequently, the effective impedance of the voltagedrop impedance element 130 ₁ in parallel with the N-type transistor N₁being turned off would be equal to the effective impedance of thevoltage drop impedance element 130 ₂ in parallel with the N-typetransistor N₂ being turned off, ensuring the cross voltages applied onthe N-type transistors N₁ and N₂ to be the same. In some othersituations, if the electronic characteristics of the N-type transistorN₁ and N₂ are different, then X and Y may be chosen to be differentvalues so the cross voltages applied on the N-type transistor N₁ and N₂can still be substantially the same.

To prevent the inverter 100 from generating too much leakage currents,each of the diodes D1 and D2 can be in a state close to being turned onbut not being turned on completely when the output terminal OUT outputsthe high voltage. In addition, each of the diodes D1 and D2 has an anodeand a cathode, and for each of the diodes D1 and D2, the voltage at theanode would be higher than the voltage at the cathode. That is, when theoutput terminal OUT outputs the high voltage, each of the diodes D1 andD2 can be forward biased and can be in the state close to being turnedon but not fully turned on. However, this is not to limit the scope ofthe present invention.

FIG. 2 shows an inverter 200 according to one embodiment of the presentinvention. The inverters 100 and 200 have similar structures and can beoperated with similar principles. However, the main difference betweenthese two inverters is in that the voltage of the anode is lower thanthe voltage at the cathode for each of the diodes D1 in the voltage dropimpedance element 230 ₁, and the voltage of the anode is lower than thevoltage at the cathode for each of the diodes D2 in the voltage dropimpedance element 230 ₂. In other words, when the output terminal OUToutputs the high voltage, each of the diodes D1 and D2 is reversebiased, and is in the state close to being turned on but not fullyturned on. Since the reverse biased diodes may provide even greaterimpedance than the forward biased diodes, the number of diodes requiredby the voltage drop impedance elements 230 ₁ and 230 ₂ can be smallerthan the number of diodes required by the voltage drop impedanceelements 130 ₁ and 130 ₂.

In FIGS. 1 and 2, the inverters 100 and 200 use diodes to implement thevoltage drop impedance elements 130 ₁, 130 ₂, 230 ₁, and 230 ₂. However,in other embodiments of the present invention, the inverter can also usediode-connected transistors coupled in series, resistors, or other typesof elements to implement the voltage drop impedance elements. FIG. 3shows an inverter 300 according to one embodiment of the presetinvention. The inverters 100 and 300 have similar structures and can beoperated with similar principles. However, the main difference betweenthese two inverters is in that the voltage drop impedance element 330 ₁includes X diode-connected transistors M1 coupled in series, and thevoltage drop impedance element 330 ₂ includes Y diode-connectedtransistors M2 coupled in series.

For example, in FIG. 3, the transistors M1 and M2 can be N-typetransistors. Also, for each of the transistors M1, the gate can becoupled to its drain, so that the transistor M1 would behave like adiode. Similarly, for each of the transistors M2, the gate can becoupled to its drain, so that the transistor M2 would behave like adiode. Also, the present invention does not limit the transistors M1 andM2 to N-type transistors. In some other embodiments, the transistors M1and M2 can be P-type transistors, and the gates of the transistors M1and M2 would be coupled to their drain accordingly, so the transistorsM1 and M2 can be operated as diodes.

In addition, according to different system requirements, the voltagedrop impedance elements coupled in parallel with different N-typetransistors may have different resistant values or the same resistantvalue. For example, in FIG. 3, the voltage drop impedance element 330 ₁can include X diode-connected transistors M1 coupled in series while thevoltage drop impedance element 330 ₂ can include Y diode-connectedtransistors M2 coupled in series. In the case that the N-typetransistors N₁ and N₂ have the same electronic characteristics, X and Ycan be corresponding to the same integer greater than 1. Consequently,the effective impedance of the voltage drop impedance element 330 ₁ inparallel with the N-type transistor N₁ being turned off would be equalto the effective impedance of the voltage drop impedance element 330 ₂in parallel with the N-type transistor N₂ being turned off, ensuring thecross voltages applied on the N-type transistors N₁ and N₂ to be thesame. In some other situations, if the electronic characteristics of theN-type transistor N₁ and N₂ are different, then X and Y may be chosen tobe different values so the cross voltages of the N-type transistor N₁and N₂ can still be substantially the same.

However, in the case that the N-type transistors N₁ and N₂ havedifferent electronic characteristics, if the difference between theirelectronic characteristics is not significant, then the impedances ofthe voltage drop impedance elements 330 ₁ and 330 ₂ would still be muchsmaller than the impedances of the N-type transistors N₁ and N₂ when theN-type transistors N₁ and N₂ are turned off. Therefore, the voltage dropimpedance elements 330 ₁ and 330 ₂ will still dominate the crossvoltages applied on the N-type transistors N₁ and N₂. In this case, evenif the voltage drop impedance elements 330 ₁ and 330 ₂ have the samenumber of transistors, that is, even if X equals to Y, the crossvoltages applied on the N-type transistors N₁ and N₂ can still besubstantially balanced, mitigating the system instability caused by highcross voltages applied on only some of the transistors. Consequently,the design flow and the manufacturing process of the inverter 300 can befurther simplified.

FIG. 4 shows an inverter 400 according to one embodiment of the presentinvention. The inverters 100 and 400 have similar structures and can beoperated with similar principles. However, the main difference betweenthese two inverters is in that the voltage drop impedance element 430 ₁includes a resistor R1 and the voltage drop impedance element 430 ₂includes a resistor R2. By properly selecting the resistance of theresistors R1 and R2, the cross voltages applied on the N-typetransistors N₁ and N₂ can be adjusted to be balanced, mitigating thesystem instability caused by high cross voltages applied on only some ofthe transistors.

Furthermore, in some embodiments, the inverters 100 to 400 can keep thebalance between the cross voltages applied on the N-type transistors N₁and N₂ even without the voltage drop impedance elements 130 ₂, 230 ₂,330 ₂, and 430 ₂ but only with the voltage drop impedance elements 130₁, 230 ₁, 330 ₁, and 430 ₁, or without the voltage drop impedanceelements 130 ₁, 230 ₁, 330 ₁, and 430 ₁ but only with the voltage dropimpedance elements 130 ₂, 230 ₂, 330 ₂, and 430 ₂.

Generally, the structures of the N-type transistors are more fragilethan the structures of the P-type transistors, and are easier to breakdown. Therefore, in FIGS. 1 to 4, the inverters 100 to 400 include thevoltage drop impedance elements 130 ₁ to 430 ₁ coupled in parallel withthe N-type transistor N₁ and the voltage drop impedance elements 130 ₂to 430 ₂ coupled in parallel with the N-type transistor N₂, but theinverters 100 to 400 do not include the voltage drop impedance elementscoupled in parallel with the P-type transistors P₁ and P₂. However, inother embodiments, the inverter may also include the voltage dropimpedance elements coupled in parallel with the P-type transistors P₁and P₂.

FIG. 5 shows an inverter 500 according to one embodiment of the presentinvention. The inverters 500 and 300 have similar structures and can beoperated with similar principles. However, the main difference betweenthese two inverters is in that the inverter 500 further includes thevoltage drop impedance elements 540 ₁ and 540 ₂. The voltage dropimpedance element 540 ₁ is coupled in parallel with the P-typetransistor P₁, and the impedance of the voltage drop impedance element540 ₁ is smaller than the impedance of the P-type transistor P₁ when theP-type transistor P₁ is turned off. Also, the voltage drop impedanceelement 540 ₂ is coupled in parallel with the P-type transistor P₂, andthe impedance of the voltage drop impedance element 540 ₂ is smallerthan the impedance of the P-type transistor P₂ when the P-typetransistor P₂ is turned off.

In other words, when the P-type transistors P₁ and P₂ are turned off,the P-type transistors P₁ and P₂ will have to endure the voltage betweenthe first system voltage terminal 110 and the output terminal OUT.However, in this case, the voltage drop impedance elements 540 ₁ and 540₂ can form a current path between the first system voltage terminal 110and the output terminal OUT. Also, since the impedances of the voltagedrop impedance elements 540 ₁ and 540 ₂ are smaller than the impedancesof the P-type transistors P₁ and P₂ when the P-type transistors P₁ andP₂ are turned off, the current flowing through the voltage dropimpedance elements 540 ₁ and 540 ₂ would be greater than the leakagecurrent flowing through the P-type transistors P₁ and P₂ when the P-typetransistors P₁ and P₂ are turned off. In this case, by properlyselecting the voltage drop impedance elements 540 ₁ and 540 ₂, the crossvoltages applied on the P-type transistors P₁ and P₂ can be balanced.

For example, if the effective impedance of the voltage drop impedanceelement 540 ₁ in parallel with the P-type transistor P₁ being turned offis substantially equal to the effective impedance of the voltage dropimpedance element 540 ₂ in parallel with the P-type transistor P₂ beingturned off, then the voltage between the first system voltage terminal110 and the output terminal OUT will be endured by the voltage dropimpedance element 540 ₁ coupled in parallel with the P-type transistorP₁ and the voltage drop impedance element 540 ₂ coupled in parallel withthe P-type transistor P₂ equally. In other words, the P-type transistorP₁ and P₂ would have the same cross voltages. Consequently, the issue ofsystem instability caused by unbalanced cross voltages on the P-typetransistors P₁ and P₂ can be mitigated. In some embodiments, since theinverter 500 is operated with direct current (DC) power, the effectiveimpedance can be referred to as effective resistance.

In FIG. 5, the voltage drop impedance element 540 ₁ can be implementedby a plurality of diode-connected transistors M3 coupled in series, andthe voltage drop impedance element 540 ₂ can be implemented by aplurality of diode-connected transistors M4 coupled in series. Also, inthe embodiment shown in FIG. 5, the transistors M3 and M4 can be N-typetransistors. However, in some embodiments, the transistors M3 and M4 canalso be P-type transistors.

Furthermore, in other embodiments, the voltage drop impedance elements540 ₁ and 540 ₂ can be implemented by a plurality of diodes coupled inseries or a resistor, such as the voltage drop impedance elements 130 ₁and 130 ₂ shown in FIG. 1, the voltage drop impedance elements 230 ₁ and230 ₂ shown in FIG. 2, or the voltage drop impedance elements 430 ₁ and430 ₂ shown in FIG. 4.

FIG. 6 shows an inverter 600 according to one embodiment of the presentinvention. In the embodiments shown in FIGS. 1 to 5, the controlterminals of the N-type transistors N₁ and N₂ and the control terminalsof the P-type transistors P₁ and P₂ can all receive the same controlsignal SIG_(IN); therefore, the P-type transistors P₁ and P₂ areoperated synchronously, and the N-type transistors N₁ and N₂ areoperated synchronously. Also, when the P-type transistors P₁ and P₂ areturned on, the N-type transistors N₁ and N₂ are turned off, and when theP-type transistors P₁ and P₂ are turned off, the N-type transistors N₁and N₂ are turned on. However, this is not to limit the presentinvention. In FIG. 6, the N-type transistors N₁ and N₂ of the inverter600 can receive different control signals SIG_(INN1) and SIG_(INN2), andthe P-type transistors P₁ and P₂ of the inverter 600 can receivedifferent control signals SIG_(INP1) and SIG_(INP2). In this case, theP-type transistors P₁ and P₂ can still be operated synchronously, andthe N-type transistors N₁ and N₂ can still be operated synchronously.Also, when the P-type transistors P₁ and P₂ are turned on, the N-typetransistors N₁ and N₂ are turned off, and when the P-type transistors P₁and P₂ are turned off, the N-type transistors N₁ and N₂ are turned on.

In some embodiments, to output the high voltage through the outputterminal OUT, the N-type transistors N₁ and N₂ have to be turned off.For example, if the first voltage V1 is 6V, and the second voltage V2 is0V, then the control signals SIG_(INP1) and SIG_(INP2) should turn onthe P-type transistors P₁ and P₂, and the control signals SIG_(INN1) andSIG_(INN2) should turn off the N-type transistors N₁ and N₂ so that theinverter 600 can output the high voltage close to the first voltage V1.In this case, if the control signals SIG_(INN1) and SIG_(INN2) are bothat the low voltage, such as 0V, for turning off the N-type transistorsN₁ and N₂, then the gate-to-drain voltage of the N-type transistor N₁would be close to the voltage difference between the first voltage V1and the second voltage V2, such as 6V. If the voltage difference betweenthe first voltage V1 and the second voltage V2 is rather large, theN-type transistor N₁ may generate significant leakage current or evenbreak down. Therefore, in this case, the control signal SIG_(INN1) canbe set to 3V, which is half of the voltage difference between the firstvoltage V1 and the second voltage V2, the control signal SIG_(INN2) canbe set to 0V, and the control signals SIG_(INP1) and SIG_(INP2) can bothbe set to 3V. That is, when the control signals SIG_(INN1) andSIG_(INN2) received by the control terminals of the N-type transistorsN₁ and N₂ are at different voltages, the control signals SIG_(INP1) andSIG_(INP2) received by the control terminals of the P-type transistorsP₁ and P₂ are at the same voltage. Consequently, while the N-typetransistors N₁ and N₂ can be turned off effectively, the possibility ofthe N-type transistors N₁ and N₂ being damaged by large gate-to-sourcevoltages and gate-to-drain voltages can be reduced. In the embodimentsaforementioned, if the inverter includes K N-type transistors N₁ toN_(K), then the K N-type transistors N₁ to N_(K) can receive thedifferent control signals SIG_(INN1) to SIG_(INNK), where the voltage ofthe Nth control signal SIG_(INNN) can be set to SIG_(INNN)=V2+(K−N)·X,where

$X = {\frac{V\; 1}{K}.}$

Similarly, to output the low voltage through the output terminal OUT,the P-type transistors P₁ and P₂ have to be turned off. When turning offthe P-type transistors P₁ and P₂, the similar principle mentioned in theprevious case may be applied, that is, the control signals SIG_(INN1)and SIG_(INN2) can both be at 3V while the control signals SIG_(INP1)and SIG_(INP2) can be at 3V and 6V respectively. In other words, whenthe control signals SIG_(INP1) and SIG_(INP2) received by the controlterminals of the P-type transistors P₁ and P₂ are at different voltages,the control signals SIG_(INN1) and SIG_(INN2) received by the controlterminals of the N-type transistors N₁ and N₂ are at the same voltage sothe possibility of the P-type transistors P₁ and P₂ being damaged bylarge gate-to-source voltages and gate-to-drain voltages can be reduced.In this case, the N-type transistor N₁ and the P-type transistor P₁ cansubstantially controlled by the same control signal, that is, thecontrol signals SIG_(INN1) and SIG_(INP1) can be substantially the samecontrol signal. In the embodiments aforementioned, if the inverterincludes K P-type transistors P₁ to P_(K), then the K P-type transistorsP₁ to P_(K) can receive the different control signals SIG_(INP1) toSIG_(INPK), where the voltage of the Nth control signal SIG_(INPN) canbe set to SIG_(INPN)=V1−(K−N)·X, where

$X = {\frac{V\; 1}{K}.}$

Furthermore, although the inverters 100 to 600 all include two N-typetransistors N₁ and N₂ and two P-type transistors P₁ and P₂, however, inother embodiments, the inverter may include more transistors accordingto the system requirement.

FIG. 7 shows an inverter 700 according to one embodiment of the presentinvention. The inverter 700 includes K N-type transistors N₁ to N_(K), KP-type transistors P₁ to P_(K), K voltage drop impedance elements 730 ₁to 730 _(K) coupled in parallel with the K N-type transistors N₁ toN_(K) respectively, and K voltage drop impedance elements 740 ₁ to 740_(K) coupled in parallel with the K P-type transistors P₁ to P_(K)respectively, where K is an integer greater than 2. Since the inverter700 includes more transistors than the inverters 100 to 600, theinverter 700 can be used to output higher voltages. Also, by selectingthe voltage drop impedance elements 730 ₁ to 730 _(K) and 740 ₁ to 740_(K) with proper impedance, the cross voltages applied on the N-typetransistors N₁ to N_(K) can be balanced when the inverter 700 outputsthe high voltage, and the cross voltages applied on the P-typetransistors P₁ to P_(K) can be balanced when the inverter 700 outputsthe low voltage. Therefore, the system instability caused by unbalancedcross voltages on the transistors can be mitigated.

In addition, in FIG. 7, the K N-type transistors N₁ to N_(K) and the KP-type transistors P₁ to P_(K) can all receive the same control signalSIG_(IN), however, in other embodiments, the K N-type transistors N₁ toN_(K) and the K P-type transistors P₁ to P_(K) may also receivedifferent control signals while the N-type transistors N₁ to N_(K) canbe operated synchronously, and the P-type transistors P₁ to P_(K) can beoperated synchronously. Also, when the P-type transistors P₁ to P_(K)are turned on, the N-type transistors N₁ to N_(K) are turned off, andwhen the plurality of P-type transistors P₁ to P_(K) are turned off, theN-type transistors N₁ to N_(K) are turned on. Therefore, the possibilityof the transistors being damaged by large gate-to-source voltages andgate-to-drain voltages can be reduced.

FIG. 8 shows an inverter 700′ according to one embodiment of the presentinvention. The inverters 700′ and 700 have similar structures, and inFIG. 8, K is 3. That is, the inverter 700′ includes 3 N-type transistorsN₁ to N₃ and 3 P-type transistors P₁ to P₃. In addition, the N-typetransistors N₁ to N₃ may receive the control signals SIG_(INN1) toSIG_(INN3) respectively, and the P-type transistors P₁ to P₃ may receivethe control signals SIG_(INP1) to SIG_(INP3) respectively.

In some embodiments, the inverter may include K P-type transistors and KN-type transistors, and the user may decide the number K according tothe first voltage V1 and the second voltage V2, and then decide thevoltages of the control signals according to the number K so the controlsignals SIG_(INN1) to SIG_(INNK) can be, for example, arranged to beclose to the equal-distribution. For example, in the case with the firstvoltage V1 being 9V and the second voltage V2 being 0V, the user maydecide K to be 3 first as shown in FIG. 8. In this case, to turn offN-type transistors N₁, N₂, and N₃ for outputting the high voltagethrough the output terminal OUT, the control signals SIG_(INP1),SIG_(INP2), and SIG_(INP3) can all be set to 6V while the control signalSIG_(INN1) can be set to 6V, the control signal SIG_(INN2) can be set to3V, and the control signal SIG_(INN3) can be set to 0V. In other words,when the control signals SIG_(INN1), SIG_(INN2), and SIG_(INN3) receivedby the control terminals of the N-type transistors N₁, N₂, and N₃ are atdifferent voltages, the control signals SIG_(INP1), SIG_(INP2), andSIG_(INP3) received by the control terminals of the P-type transistorsP₁, P₂, and P₃ are at the same voltage. Consequently, while turning offthe N-type transistors N₁, N₂, and N₃ effectively, the possibility ofthe N-type transistors N₁, N₂, and N₃ being damaged by largegate-to-source voltages and gate-to-drain voltages can be reduced. Inthe aforementioned embodiments, if the inverter includes K N-typetransistors N₁ to N_(K), then the K N-type transistors N₁ to N_(K) canreceive different control signals SIG_(INN1) to SIG_(INNK), where thevoltage of the Nth control signal SIG_(INNN) can be set toSIG_(INNN)=V2+(K−N)·X, where

$X = {\frac{V\; 1}{K}.}$

Similarly, to output the low voltage through the output terminal OUT,the P-type transistors P₁. P₂, and P₃ have to be turned off. In the casewith the first voltage V1 being 9V and the second voltage V2 being 0V,the control signals SIG_(INN1), SIG_(INN2), and SIG_(INN3) can all beset to 3V while the control signal SIG_(INP1) can be set to 3V, thecontrol signal SIG_(INP2) can be set to 6V, and the control signalSIG_(INP3) can be set to 9V. In other words, when the control signalsSIG_(INP1), SIG_(INP2), and SIG_(INP3) received by the control terminalsof the P-type transistors P₁. P₂, and P₃ are at different voltages, thecontrol signals SIG_(INN1), SIG_(INN2), and SIG_(INN3) received by thecontrol terminals of the N-type transistors N₁, N₂, and N₃ are at thesame voltage. Consequently, while turning off the P-type transistors P₁.P₂, and P₃ effectively, the possibility of the P-type transistors P₁,P₂, and P₃ being damaged by large gate-to-source voltages andgate-to-drain voltages can be reduced. Also, in the aforementionedembodiments, the inverter may include K P-type transistors and K N-typetransistors, and the user may decide the number K according to the firstvoltage V1 and the second voltage V2, and then decide the voltages ofthe control signals according to the number K. If the inverter includesK P-type transistors P₁ to P_(K), then the K P-type transistors P₁ toP_(K) can receive different control signals SIG_(INP1) to SIG_(INPK),where the voltage of the Nth control signal SIG_(INPN) can be set toSIG_(INPN)=V1−(K−N)·X, where

$X = {\frac{V\; 1}{K}.}$Consequently, the control signals SIG_(INP1) to SIG_(INPK) can be, forexample, arranged to be close to the equal-distribution.

In other words, in FIG. 8, although the N-type transistors N₁, N₂, andN₃ can receive different control signals, the N-type transistors N₁, N₂,and N₃ can still be operated synchronously, that is, can be turned onand turned off simultaneously. Also, although the P-type transistors P₁,P₂, and P₃ can receive different control signals, the P-type transistorsP₁, P₂, and P₃ can still be operated synchronously. In addition, theN-type transistors N₁, N₂, and N₃ are turned off when the P-typetransistors P₁, P₂, and P₃ are turned on, and the P-type transistors P₁,P₂, and P₃ are turned off when the N-type transistors N₁, N₂, and N₃ areturned on. Therefore, the N-type transistors N₁, N₂, and N₃ and theP-type transistors P₁, P₂, and P₃ can be operated normally while thepossibility of the transistors being damaged by large gate-to-sourcevoltages and gate-to-drain voltages can be reduced.

FIG. 9 shows an inverter 800 according to one embodiment of the presentinvention. The inverter 800 includes a first system voltage terminal110, a second system voltage terminal 120, an output terminal OUT, KP-type transistors P′₁ to P′_(K), and K N-type transistors N′₁ toN′_(K), where K is an integer greater than 1. To reduce the possibilityof the P-type transistors P′₁ to P′_(K) and N-type transistors N′₁ toN′_(K) being damaged by large gate-to-source voltages and gate-to-drainvoltages when turned off, the user can choose the number K according tothe first voltage V1 and the second voltage V2 properly.

In FIG. 9, since the N-type transistor N′₁ is closer to the outputterminal OUT while the N-type transistor N′₂ is closer to the secondsystem voltage terminal 120, the gate-to-source voltages of these twotransistors may be different. Therefore, when turned off, the impedancesof the N-type transistors N′₁ and N′₂ may be quite different, causingthe cross voltages applied on the N-type transistors N′₁ and N′₂ to beunbalanced. Since the N-type transistor N′₁ may have to endure a largercross voltage, the N-type transistor N′₁ can be chosen to have a channelwidth-to-length ratio greater than the channel width-to-length ratio ofthe N-type transistor N′₂. Consequently, the impedance of the N-typetransistor N′₁ would be smaller than the impedance of the N-typetransistor N′₂, so the cross voltage applied on the N-type transistorN′₁ can be reduced. That is, by selecting the N-type transistors N′₁ andN′₂ to have proper channel width-to-length ratios, the cross voltagesapplied to the N-type transistors N′₁ and N′₂ can be balanced.

Similarly, the user can also choose the N-type transistor N′₂ to have achannel width-to-length ratio greater than the N-type transistor N′₃,and so on, and finally choose the N-type transistor N′_((K-1)) to have achannel width-to-length ratio greater than the N-type transistor N′_(K).Consequently, when the N-type transistors N′₁ to N′_(K) are turned off,the cross voltages applied on the N-type transistors N′₁ to N′_(K) wouldhave similar values, mitigating the system instability caused byunbalanced cross voltages applied on the N-type transistors N′₁ toN′_(K).

Similarly, the inverter 800 can also select the P-type transistors P′₁to P′_(K) to have proper channel width-to-length ratios, so that thechannel width-to-length ratio of the P-type transistor P′₁ would begreater than the P-type transistor P′₂, the channel width-to-lengthratio of the P-type transistor P′₂ would be greater than the P-typetransistor P′₃, and so on, and finally, the channel width-to-lengthratio of the P-type transistor P′_((K-1)) would be greater than theP-type transistor P′_(K). Consequently, when the P-type transistors P′₁to P′_(K) are turned off, the cross voltages applied on the P-typetransistors P′₁ to P′_(K) would have similar values, mitigating thesystem instability caused by unbalanced cross voltages applied on theP-type transistors P′₁ to P′_(K).

In FIG. 9, the control terminals of the P-type transistors P′₁ to P′_(K)and the control terminals of the N-type transistors N′₁ to N′_(K) can becoupled together for receiving the same control signal SIG_(IN), so theP-type transistors P′₁ to P′_(K) can be operated synchronously and theN-type transistors N′₁ to N′_(K) can be operated synchronously. Also,the N-type transistors N′₁ to N′_(K) are turned off when the P-typetransistors P′₁ to P′_(K) are turned on, and the P-type transistors P′₁to P′_(K) are turned off when the N-type transistors N′₁ to N′_(K) areturned on. However, in other embodiments, the control terminals of theP-type transistors P′₁ to P′_(K) may receive different control signalsand the control terminals of the N-type transistors N′₁ to N′_(K) mayreceive different control signals as shown in FIG. 8. Even in this case,the P-type transistors P′₁ to P′_(K) can still be operated synchronouslyand the N-type transistors N′₁ to N′_(K) can still be operatedsynchronously. Also, the N-type transistors N′₁ to N′_(K) are turned offwhen the P-type transistors P′₁ to P′_(K) are turned on, and the P-typetransistors P′₁ to P′_(K) are turned off when the N-type transistors N′₁to N′_(K) are turned on. Therefore, the possibility of the N-typetransistors N′₁ to N′_(K) and the P-type transistors P′₁ to P′_(K) beingdamaged by the large gate-to-source voltages and gate-to-drain voltageswhen turned off can be reduced. In addition, in some embodiments, theinverter 800 can also further combine with the voltage drop impedanceelements.

In the aforementioned embodiments, the N-type transistors N₁ to N_(K)and N′₁ to N′_(K), the P-type transistors P₁ to P_(K) and P′₁ to P′_(K),and the voltage drop impedance elements 130 ₁, 130 ₂, 230 ₁, 230 ₂, 330₁, 330 ₂, 430 ₁, 430 ₂, 540 ₁, 540 ₂, 630 ₁, 630 ₂, 640 ₁, 640 ₂, 730 ₁to 730 _(K), and 740 ₁ to 740 _(K) can all be manufactured by aComplementary Metal-Oxide-Semiconductor (CMOS) manufacturing process.That is, the whole inverter 100 to 800 can be manufactured with the sameprocess. Also, to further reduce the leakage currents, the silicon oninsulator (SOI) manufacturing process may be adopted. In addition, theinverter manufactured by the silicon on insulator manufacturing processmay have better high-frequency performance.

In summary, the inverters provided by the embodiments of the presentinvention can adjust and balance the cross voltages applied on thetransistors with voltage drop impedance elements or the channelwidth-to-length ratios of the transistors. Therefore, the systeminstability caused by unbalanced cross voltages on the transistors canbe mitigated.

Those skilled in the art will readily observe that numerousmodifications and alterations of the device and method may be made whileretaining the teachings of the invention. Accordingly, the abovedisclosure should be construed as limited only by the metes and boundsof the appended claims.

What is claimed is:
 1. An inverter comprising: a first system voltageterminal configured to receive a first voltage; a second system voltageterminal configured to receive a second voltage; an output terminal; aplurality of P-type transistors coupled in series between the firstsystem voltage terminal and the output terminal; a plurality of N-typetransistors coupled in series between the output terminal and the secondsystem voltage terminal; and a first voltage drop impedance elementcoupled in parallel with a first N-type transistor of the plurality ofN-type transistors; wherein: an impedance of the first voltage dropimpedance element is smaller than an impedance of the first N-typetransistor when the first N-type transistor is turned off; the firstvoltage drop impedance element comprises X diodes coupled in series or Xdiode-connected transistors coupled in series; X is an integer greaterthan 1; and a cathode of a first diode of the X diodes is coupled to ananode of a second diode of the X diodes.
 2. The inverter of claim 1,wherein a voltage at an anode of each diode is lower or higher than avoltage at its cathode.
 3. The inverter of claim 1, wherein: the firstN-type transistor has a first terminal coupled to the output terminal, asecond terminal coupled to a second N-type transistor of the pluralityof N-type transistors, and a control terminal; wherein the inverterfurther comprises: a second voltage drop impedance element coupled inparallel with the second N-type transistor, and an impedance of thesecond voltage drop impedance element is smaller than an impedance ofthe second N-type transistor when the second N-type transistor is turnedoff.
 4. The inverter of claim 3, wherein an effective impedance of thefirst voltage drop impedance element in parallel with the first N-typetransistor being turned off is substantially equal to an effectiveimpedance of the second voltage drop impedance element in parallel withthe second N-type transistor being turned off.
 5. The inverter of claim3, wherein the impedance of the first voltage drop impedance element issubstantially equal to the impedance of the second voltage dropimpedance element.
 6. The inverter of claim 3, wherein: the secondvoltage drop impedance element comprises Y diodes coupled in series or Ydiode-connected transistors coupled in series; and Y is an integergreater than
 1. 7. The inverter of claim 6, wherein X is equal to orunequal to Y.
 8. The inverter of claim 6, further comprising: a thirdvoltage drop impedance element coupled in parallel with a first P-typetransistor of the plurality of P-type transistors.
 9. The inverter ofclaim 8, further comprising: a fourth voltage drop impedance elementcoupled in parallel with a second P-type transistor of the plurality ofP-type transistors.
 10. The inverter of claim 9, wherein: the thirdvoltage drop impedance element comprises a resistor, a plurality ofdiodes coupled in series, or a plurality of diode-connected transistorscoupled in series; and the fourth voltage drop impedance elementcomprises a resistor, a plurality of diodes coupled in series, or aplurality of diode-connected transistors coupled in series.
 11. Theinverter of claim 1, wherein: when a plurality of control signalsreceived by a plurality of control terminals of the plurality of P-typetransistors are at different voltages, a plurality of control signalsreceived by a plurality of control terminals of the plurality of N-typetransistors are at a same voltage; the plurality of P-type transistorsare operated synchronously; the plurality of N-type transistors areoperated synchronously; when the plurality of P-type transistors areturned on, the plurality of N-type transistors are turned off; and whenthe plurality of P-type transistors are turned off, the plurality ofN-type transistors are turned on.
 12. The inverter of claim 1, wherein:when a plurality of control signals received by a plurality of controlterminals of the plurality of N-type transistors are at differentvoltages, a plurality of control signals received by a plurality ofcontrol terminals of the plurality of P-type transistors are at a samevoltage; the plurality of P-type transistors are operated synchronously;the plurality of N-type transistors are operated synchronously; when theplurality of P-type transistors are turned on, the plurality of N-typetransistors are turned off; and when the plurality of P-type transistorsare turned off, the plurality of N-type transistors are turned on. 13.An inverter comprising: a first system voltage terminal configured toreceive a first voltage; a second system voltage terminal configured toreceive a second voltage; an output terminal; a plurality of P-typetransistors coupled in series between the first system voltage terminaland the output terminal; a plurality of N-type transistors coupled inseries between the output terminal and the second system voltageterminal; a first voltage drop impedance element coupled in parallelwith a first N-type transistor of the plurality of N-type transistors;and a second voltage drop impedance element coupled in parallel with asecond N-type transistor of the plurality of N-type transistors;wherein: the first N-type transistor has a first terminal coupled to theoutput terminal, a second terminal coupled to the second N-typetransistor of the plurality of N-type transistors, and a controlterminal; an impedance of the first voltage drop impedance element issmaller than an impedance of the first N-type transistor when the firstN-type transistor is turned off; an impedance of the second voltage dropimpedance element is smaller than an impedance of the second N-typetransistor when the second N-type transistor is turned off; the firstvoltage drop impedance element comprises X diodes coupled in series or Xdiode-connected transistors coupled in series; the second voltage dropimpedance element comprises Y diodes coupled in series or Ydiode-connected transistors coupled in series; and X and Y are integersgreater than
 1. 14. The inverter of claim 13, further comprising: athird voltage drop impedance element coupled in parallel with a firstP-type transistor of the plurality of P-type transistors.
 15. Theinverter of claim 14, further comprising: a fourth voltage dropimpedance element coupled in parallel with a second P-type transistor ofthe plurality of P-type transistors.
 16. The inverter of claim 15,wherein: the third voltage drop impedance element comprises a resistor,a plurality of diodes coupled in series, or a plurality ofdiode-connected transistors coupled in series; and the fourth voltagedrop impedance element comprises a resistor, a plurality of diodescoupled in series, or a plurality of diode-connected transistors coupledin series.